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Manufacturer ON Semiconductor

Package/Case D2PAK(TO-263AB)

Manufacturer Lead-Time -

Category FET,MOSFET - Single

Packing -

Lifecycle Active

Country/Region the United States

Description Package/Case:D2PAK(TO-263); Date-Source Voltage(Vgs)(Max):±20V; Continuous Drain Current(ID)@T:32A ; FET Channel Polarity:N-Channel; Technology:MOSFET (Metal Oxide); Drain to Source Voltage(Vdss):60V ; Drive Voltage@(Max Rds On, Min Rds On):5V, 10V; Rds On(Max)@Id,Vgs:35mΩ @ 16A, 10V; Gate Source Threshold Voltage(Vgs th)(Max)@Id:2.5V @ 250µA; Gate Charge (Qg)(Max)@Vgs:20 nC @ 5 V; Input Capacitance(Max)@Vds:1040 pF @ 25 V; FET Feature:Depletion Mode; Power Dissipation(Max):3.75W (Ta), 79W (Tc); Operating Temperature Range:-55℃~175℃; Mounting Style:Surface Mount; Series:QFET®;

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