Manufacturer
ON Semiconductor
Package/Case
D2PAK(TO-263AB)
Manufacturer Lead-Time
-
Category
FET,MOSFET - Single
Packing
-
Lifecycle
Active
Country/Region
the United States
Description
Package/Case:D2PAK(TO-263); Date-Source Voltage(Vgs)(Max):±20V; Continuous Drain Current(ID)@T:32A ; FET Channel Polarity:N-Channel; Technology:MOSFET (Metal Oxide); Drain to Source Voltage(Vdss):60V ; Drive Voltage@(Max Rds On, Min Rds On):5V, 10V; Rds On(Max)@Id,Vgs:35mΩ @ 16A, 10V; Gate Source Threshold Voltage(Vgs th)(Max)@Id:2.5V @ 250µA; Gate Charge (Qg)(Max)@Vgs:20 nC @ 5 V; Input Capacitance(Max)@Vds:1040 pF @ 25 V; FET Feature:Depletion Mode; Power Dissipation(Max):3.75W (Ta), 79W (Tc); Operating Temperature Range:-55℃~175℃; Mounting Style:Surface Mount; Series:QFET®;