Manufacturer
Infineon Technologies
Package/Case
TO247-3
Manufacturer Lead-Time
52
Category
FET,MOSFET - Single
Packing
Box
Lifecycle
Active
Country/Region
Germany
Description
Package/Case:TO247-3; Date-Source Voltage(Vgs)(Max):±20V; Continuous Drain Current(ID)@T:50A (Tc); FET Channel Polarity:N-Channel; Technology:MOSFET (Metal Oxide); Drain to Source Voltage(Vdss):650 V; Drive Voltage@(Max Rds On, Min Rds On):10V; Rds On(Max)@Id,Vgs:4.5V @ 1.24mA; Gate Source Threshold Voltage(Vgs th)(Max)@Id:41mΩ @ 24.8A, 10V; Gate Charge (Qg)(Max)@Vgs:102 nC @ 10 V; Input Capacitance(Max)@Vds:4975 pF @ 400 V; FET Feature:N-Channel; Power Dissipation(Max):227W (Tc); Operating Temperature Range:-55℃~150℃; Mounting Style:Through Hole; Series:IPW65R041;