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IPW65R041CFD7

Manufacturer Infineon Technologies

Package/Case TO247-3

Manufacturer Lead-Time 52

Category FET,MOSFET - Single

Packing Box

Lifecycle Active

Country/Region Germany

Description Package/Case:TO247-3; Date-Source Voltage(Vgs)(Max):±20V; Continuous Drain Current(ID)@T:50A (Tc); FET Channel Polarity:N-Channel; Technology:MOSFET (Metal Oxide); Drain to Source Voltage(Vdss):650 V; Drive Voltage@(Max Rds On, Min Rds On):10V; Rds On(Max)@Id,Vgs:4.5V @ 1.24mA; Gate Source Threshold Voltage(Vgs th)(Max)@Id:41mΩ @ 24.8A, 10V; Gate Charge (Qg)(Max)@Vgs:102 nC @ 10 V; Input Capacitance(Max)@Vds:4975 pF @ 400 V; FET Feature:N-Channel; Power Dissipation(Max):227W (Tc); Operating Temperature Range:-55℃~150℃; Mounting Style:Through Hole; Series:IPW65R041;

$8.30
/ Pieces
Stock: 50