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IRFB7434PBF

Manufacturer Infineon Technologies

Package/Case TO-220-3

Manufacturer Lead-Time -

Category FET,MOSFET - Single

Packing Tube

Lifecycle Active

Country/Region Germany

Description Package/Case:TO220AB; Date-Source Voltage(Vgs)(Max):±20V; Continuous Drain Current(ID)@T:195A ; FET Channel Polarity:N-Channel; Technology:MOSFET (Metal Oxide); Drain to Source Voltage(Vdss):40V ; Drive Voltage@(Max Rds On, Min Rds On):6V, 10V; Rds On(Max)@Id,Vgs:1.6mΩ @ 100A, 10V; Gate Source Threshold Voltage(Vgs th)(Max)@Id:3.9V @ 250µA; Gate Charge (Qg)(Max)@Vgs:324 nC @ 10 V; Input Capacitance(Max)@Vds:10820 pF @ 25 V; Power Dissipation(Max):294W (Tc); Operating Temperature Range:-55℃~175℃; Mounting Style:Through Hole; Series:HEXFET®, StrongIRFET™;

$0.68
/ Pieces
Stock: 10000