Manufacturer
STMicroelectronics
Package/Case
PowerFlat™ (5*6)
Manufacturer Lead-Time
-
Category
FET,MOSFET - Single
Packing
-
Lifecycle
Active
Country/Region
Switzerland
Description
Package/Case:PowerFlat™ (5*6); Date-Source Voltage(Vgs)(Max):±20V; Continuous Drain Current(ID)@T:140A; FET Channel Polarity:N-Channel; Technology:MOSFET (Metal Oxide); Drain to Source Voltage(Vdss):60V ; Drive Voltage@(Max Rds On, Min Rds On):10V; Rds On(Max)@Id,Vgs:2.5mΩ @ 16A, 10V; Gate Source Threshold Voltage(Vgs th)(Max)@Id:4V @ 1mA; Gate Charge (Qg)(Max)@Vgs:40 nC @ 10 V; Input Capacitance(Max)@Vds:2700 pF @ 25 V; Power Dissipation(Max):4.8W (Ta), 125W (Tc); Operating Temperature Range:175℃; Mounting Style:Surface Mount; Series:DeepGATE™, STripFET™ VII;